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Hybrid transition-metal dichalcogenides (TMDs) with different chalcogens on each side (X-TM-Y) have attracted attention because of their unique properties. Nanotubes based on hybrid TMD materials have advantages in flexibility over conventional TMD nanotubes. Here we predict the wide band gap tunability of hybrid TMD double-wall nanotubes (DWNTs) from metal to semiconductor. Using density-function theory (DFT) with HSE06 hybrid functional, we find that the electronic property of X-Mo-Y DWNTs (X = O and S, inside a tube; Y = S and Se, outside a tube) depends both on electronegativity difference and diameter difference. If there is no difference in electron negativity between inner atoms (X) of outer tube and outer atoms (Y) of inner tube, the band gap of DWNTs is the same as that of the inner one. If there is a significant electronegativity difference, the electronic property of the DWNTs ranges from metallic to semiconducting, depending on the diameter differences. Our results provide alternative ways for the band gap engineering of TMD nanotubes.
Nanotubes which can be formed by rolling up two-dimensional materials, such as graphene and transition-metal dichalcogenides (TMDs), have attracted a great deal of attention due to their distinct physical and chemical properties.[1–5] Nanotubes based on TMDs are semiconductors with wide applications including field-effect transistors,[6–8] photo-detectors,[9] and solid lubricants.[10] Similar to carbon nanotubes (CNTs), the properties of TMD nanotubes, such as band gap,[11,12] mechanic property,[13,14] carrier mobility,[15] and optical conductivity,[16] are predicted to be diameter-dependent. Because the bending energy is proportional to the effective thickness to the power three,[17] it is hard to roll TMD nanotubes with small diameters. Theoretical calculations predicted that the smallest diameter of MoS2 nanotube is larger than 6 nm,[18] which was confirmed by experimental observations.[19] Thus, the band gap tunability of fabricated TMD nanotubes is limited as a result of the large diameter.[8]
Recently, hybrid TMD materials with different chalcogen on each side of the sandwich structure, for example, Janus S-Mo-Se, have been fabricated.[20,21] Because of the different chalcogens on each side, hybrid TMD materials tend to bend to release the intrinsic strain. Thus, hybrid TMDs are believed to be good candidates to form nanotubes with a smaller diameter (less than 2 nm).[22] There are some calculations based on density-function theory (DFT) about hybrid TMD single-wall nanotubes (SWNTs), such as S-Mo-Te nanotube and S-Mo-Se nanotube.[22,23] Band structure of hybrid S-Mo-Te nanotube is similar to that of the conventional TMD nanotube, which is tunable from 0 to 1.5 eV. The maximum band gap is attributed to the fully released strain when the S-Mo-Te nanotube has the particular diameter.[22] In the hybrid S-Mo-Se armchair nanotube, the band gap ranges from 0.4 eV to 1.6 eV with an indirect-direct band gap transition.[23] However, those calculations based on Perdew–Burke–Ernzerhof function (PBE) underestimate the band gaps, especially for small nanotubes.[15] The accurate band gaps of small TMD SWNTs are still unknown.
In this paper, we first calculated the band gaps of several TMD SWNTs using HSE06 hybrid functional, which is believed to give a reliable band structure.[24,25] All the SWNTs are semiconductors. The band gap is larger than 0.5 eV when the diameter of the nanotube is as small as 1 nm. Then we constructed the double-wall nanotubes (DWNTs) using hybrid X-Mo-Y SWNTs with different components (X = O and S, inside a tube; Y = S and Se, outside a tube). Further DFT calculations show that the DWNTs are either metallic or semiconducting with a band gap ranging from zero to that of the inner nanotube. When there is no electronegativity difference between inner atoms of the outer tube and outer atoms of the inner tube, the combination is semiconducting. The band edges of the DWNTs are contributed by the inner tube. If there is a significant electronegativity difference between the two tubes, the electronic properties of DWNTs range from metallic to semiconducting depending on the diameter difference. When the diameter difference is small, there is a significant electron transfer between the two tubes, leading to metallic DWNTs. When the diameter difference increases, the interlayer interaction decreases and DWNTs remain semiconductors. For the case of two O-Mo-S nanotubes, the critical distance of semiconducting-to-metallic transition is 5.3 Å. Our results demonstrate that the band gaps of hybrid TMD DWNTs are tunable in a wide range from metallic to semiconducting and may provide contributions to electronic devices.
DFT calculations were performed by using the Vienna ab initio simulation package (VASP)[26] with the projected augmented wave (PAW) method.[27] The wave functions were expanded in a plane-wave basis set with a 400 eV energy-cutoff. Structural optimizations were carried out using Perdew–Burke–Ernzerhof (PBE) exchange and correlation function.[28] The distance between two adjacent nanotubes was larger than 10 Å. Net force on each atom was smaller than 0.02 eV/Å, with a fully converged k-point sampling in the first Brillion zone. Band structure calculations were performed with a more accurate and reliable Heyd–Scouseria–Ernzerhof (HSE06) scheme.[29,30]
Figure
For a hybrid X-Mo-Y nanotube, a small nanotube is more favorable when there is a large atomic size difference between the atoms X and Y on the two sides of the nanotube.[22] The empirical van der Waals radii are 1.71 Å, 2.06 Å, and 2.18 Å for O, S, and Se, respectively.[31] The atomic size difference between O and S/Se is larger than that between S and Se, resulting in a smaller nanotube when there are O atoms inside and S/Se atoms outside. The internal diameters and the external diameters of each single-wall hybrid X-Mo-Y nanotube are listed in Table
Electronic properties of nanotubes depend both on diameter and chirality. It is worth noting that the band gaps of TMD nanotubes have been underestimated in previous calculations due to the choice of PBE functional, especially for small nanotubes.[15,22] We use both PBE and the more accurate HSE06 hybrid functional to examine the band gaps, which are shown in Table
The band gap increases when the diameter increases. By using the HSE06 hybrid functional, the band gap is 0.51 eV for the smallest O-Mo-S (4, 4) nanotube, while calculations based on the PBE functional reveal that the O-Mo-S (4, 4) nanotube is metallic.
In order to tune the band gap of hybrid X-Mo-Y nanotubes in a wide range, we investigate the hybrid X-Mo-Y DWNTs system. Hybrid X-Mo-Y DWNTs are combined with two hybrid X-Mo-Y SWNTs of different sizes. We choose DWNTs (8, 0)@(20, 0) and (4, 4)@(10, 10). The DWNT (8, 0)@(20, 0) consists of a hybrid ZNT (8, 0) inside and a hybrid ZNT (20, 0) outside, and the DWNT (4, 4)@(10, 10) consists of a hybrid ANT (4, 4) inside and a hybrid ANT (10, 10) outside. There is a lattice mismatch between the outer and inner tubes and in the calculations we use the lattice constant of the smaller one (inner tube), because axial tension has more significant influence on the band structure than compression in TMD nanotubes.[32]
We investigate the influence of electronegativity difference on the properties of DWNTs. Figures
If there is a significant electronegativity difference between the inner atoms of the outer tube and the outer atoms of the inner tube, the electronic property of DWNTs is determined by the diameter difference. Figures
In both zigzag and armchair DWNTs, the energy bands of the inner tube are shifted to higher energy levels. The valence band of the inner tubes (marked by red lines) and the conduction band of the outer tubes (marked by blue lines) are both partially occupied, leading to metallic DWNTs. The results indicate that the electronic properties of DWNTs are dominated by the electronegativity difference between the inner element of the outer tubes and the outer element of the inner tubes. The outmost atoms of the outer tubes have no significant influence on the electronic properties.
Figures
The band gap is 0.12 eV in Fig.
To further understand the semiconducting-to-metallic transition, we plot the electron density difference for the two metallic DWNTs O-Mo-S(8, 0)@O-Mo-S(20, 0) and O-Mo-S(4, 4)@O-Mo-S(10, 10) (Figs.
Figures
In summary, we investigate the tunability of hybrid X-Mo-Y SWNTs and DWNTs. We demonstrate that X-Mo-Y SWNTs are all semiconductors with band gaps larger than 0.5 eV. For hybrid X-Mo-Y DWNTs, the electronic properties are tunable in a wide range from metallic to semiconducting, which depends on both electronegativity difference and diameter difference. Our results show the influences of the interlayer interaction on the band structures of hybrid X-Mo-Y DWNTs, and provide alternative ways to tune the band gaps of TMD nanotubes.
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